Recess gate structure for use in semiconductor device and method therefore,申请号KR20060041634-传众专利搜索

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发明名称	Recess gate structure for use in semiconductor device and method therefore
摘要
申请公布号	KR101204663(B1)	申请公布日期	2012.11.26
申请号	KR20060041634	申请日期	2006.05.09
申请人		发明人
分类号	H01L21/283;H01L21/335	主分类号	H01L21/283
代理机构		代理人
主权项
地址

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