| 摘要 |
The object of the invention is to provide a semiconductor device realizing high-speed operation of surrounding gate transistors (SGTs), which are three-dimensional semiconductors, by increasing the ON current of the SGTs. This object is achieved by a semiconductor element being provided in which a source, a drain and a gate are positioned in layers on a substrate, the semiconductor element being provided with: a silicon column (1010); an insulating body (310) surrounding the side surface of the silicon column; a gate (210) surrounding the insulating body; a source region (1310) positioned above or below the silicon column; and a drain region (1410) positioned below or above the silicon column; wherein the contact surface of the silicon column with the source region (Ts) is smaller than the contact surface of the silicon column with the drain region (Td). |
