| 摘要 |
A semiconductor device and method for manufacturing the same are provided. A substrate with an active area and a first interlayer dielectric formed over the substrate is provided. The first interlayer dielectric has a first opening exposing a portion of a surface of the active area, the first opening being filled with a fill material. A second interlayer dielectric is formed over the first interlayer dielectric with a second opening substantially exposing an upper portion of the fill material in the corresponding first opening. The fill material is then removed and the first opening and the second opening are filled with a conductive material to form a contact.
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