SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

To reduce power consumption of a memory device. To reduce the area of a memory device. To reduce the number of transistors included in a memory device. The memory device includes a comparator comparing a first output signal with a second output signal, a first memory portion including a first oxide semiconductor transistor and a first silicon transistor, a second memory portion including a second oxide semiconductor transistor and a second silicon transistor, and an output potential determiner determining a potential of the first output signal and a potential of the second output signal. One of a source and a drain of the first oxide semiconductor transistor is electrically connected to a gate of the first silicon transistor. One of a source and a drain of the second oxide semiconductor transistor is electrically connected to a gate of the second silicon transistor.