| 摘要 |
An integrated circuit, comprising a first insulating layer; a semiconductor layer; a first layer of conductors in near-ohmic or ohmic contact with the semiconductor layer and a second layer of conductors separated from the semiconductor layer by the first insulating layer, the first and second layers of conductors being patterned to form a plurality of functional blocks comprising a plurality of transistors, the first layer conductors serving as source/drain electrodes and the second layer conductors serving as gate electrodes; wherein each functional block comprises a corresponding island of the semiconductor layer isolated from that of another functional block by portions of a second insulating layer, the functional blocks being arranged such that (i) source/drain electrodes that are from different transistors and neighbour one another are arranged to be at the same potential and (ii) no conductors are present between said neighbouring electrodes. |
