发明名称 |
BI-DIRECTIONAL SELF-ALIGNED FET CAPACITOR |
摘要 |
A method of forming a field effect transistor (FET) capacitor includes forming a channel region; forming a gate stack over the channel region; forming a first extension region on a first side of the gate stack, the first extension region being formed by implanting a first doping material at a first angle such that a shadow region exists on a second side of the gate stack; and forming a second extension region on the second side of the gate stack, the second extension region being formed by implanting a second doping material at a second angle such that a shadow region exists on the first side of the gate stack.
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申请公布号 |
US2012292678(A1) |
申请公布日期 |
2012.11.22 |
申请号 |
US201213565294 |
申请日期 |
2012.08.02 |
申请人 |
CHANG LELAND;LIN CHUNG-HSUN;JI BRIAN L.;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG LELAND;LIN CHUNG-HSUN;JI BRIAN L.;SLEIGHT JEFFREY W. |
分类号 |
H01L29/94;H01L21/02 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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