| 发明名称 |
FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD OF FORMING SAME |
| 摘要 |
The disclosure relates generally to junction gate field effect transistor (JFET) structures and methods of forming the same. The JFET structure includes a p-type substrate having a p-region therein; an n-channel thereunder; and n-doped enhancement regions within the n-channel, each n-doped enhancement region separated from the p-region.
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| 申请公布号 |
US2012292669(A1) |
申请公布日期 |
2012.11.22 |
| 申请号 |
US201113108305 |
申请日期 |
2011.05.16 |
| 申请人 |
CANDRA PANGLIJEN;PHELPS RICHARD A.;RASSEL ROBERT M.;SHI YUN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CANDRA PANGLIJEN;PHELPS RICHARD A.;RASSEL ROBERT M.;SHI YUN |
| 分类号 |
H01L29/772;H01L21/336 |
主分类号 |
H01L29/772 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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