MOCVD FABRICATION OF GROUP III-NITRIDE MATERIALS USING IN-SITU GENERATED HYDRAZINE OR FRAGMENTS THERE FROM

摘要

The metal-organic chemical vapor deposition (MOCVD) fabrication of group III-nitride materials using in-situ generated hydrazine or fragments there from is described. For example, a method of fabricating a group III-nitride material includes forming hydrazine in an in-situ process. The hydrazine, or fragments there from, is reacted with a group ?? precursor in a metal-organic chemical vapor deposition (MOCVD) chamber. From the reacting, a group III-nitride layer is formed above a substrate.