GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING SAME

摘要

Provided is a group III nitride semiconductor light-emitting element having a pn junction heterostructure and characterized by being provided with: an n-type aluminum/gallium/indium nitride layer; a light-emitting layer disposed contacting the n-type aluminum/gallium/indium nitride layer and comprising a gallium/indium nitride layer containing crystals having a larger lattice constant than the n-type aluminum/gallium/indium nitride layer; and a p-type aluminum/gallium/indium nitride layer provided on the light-emitting layer. The group III nitride semiconductor light-emitting element is further characterized by: the atom concentration of donor impurities comprising atoms having a smaller atomic radius than indium in the n-type aluminum/gallium/indium nitride layer being lower at the interface between the light-emitting layer and the n-type aluminum/gallium/indium nitride layer than inside the n-type aluminum/gallium/indium nitride layer; and the atom concentration of donor impurities within the light-emitting layer being greater at the interface of the light-emitting layer and the p-type aluminum/gallium/indium nitride layer than at the interface between the light-emitting layer and the n-type aluminum/gallium/indium nitride layer.