ION IMPLANT MODIFICATION OF RESISTIVE RANDOM ACCESS MEMORY DEVICES

摘要

An improved method of fabricating a resistive memory device is disclosed, A resistive memory includes a bottom electode, atop electrode and a resistive material layer interposed therebetween, interfaces are formed between the resistive material layer and the respective top and bottom electrodes. Ions are implanted in the device to change the characteristics of one or both of these interfaces, thereby improving the perform ance of the memory device. These ions may be implanted after the three layers are fabricated, during the fabrication of these layers, or at both times.