| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film light emission diode by nanoscale lateral epitaxial growth that is advantageous in that a lamination defect in a semiconductor structure and a decrease in dislocation density are suppressed by a lateral epitaxial growth method, and is enhanced in crystal quality of a light emission layer, reduced in leakage current, and also increased in external quantum efficiency by forming a rough structure on a semiconductor structure surface; and a method of manufacturing the same. <P>SOLUTION: The thin film light emission diode by nanoscale lateral epitaxial growth includes: a substrate; a bonding metal layer located on the substrate; a first electrode located on the bonding metal layer; the semiconductor structure located on the first electrode and formed by lateral epitaxial growth; and a second electrode located on the semiconductor structure, the semiconductor structure including the second electrode forming a nanoscale rough structure on an upper surface which is not lidded with the second electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
