发明名称 MEMBER FOR EXHAUST GAS TREATING APPARATUS FROM SEMICONDUCTOR AND LIQUID CRYSTAL MANUFACTURING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a member for an exhaust gas treating apparatus which has an excellent corrosion resistance to the high-temperature corrosion by a PFC gas, and weight-saves and miniaturizes the exhaust gas treating apparatus. <P>SOLUTION: The member for an exhaust gas treating apparatus from a semiconductor and a liquid crystal manufacturing device is such that a Ni-Al alloy layer is formed to a surface of a base material, wherein the material of the base material is a Ni-Cr-Mo alloy or a Ni-Cr-Fe alloy, the Ni-Al layer has the thickness of 10-200 &mu;m, and the composition includes 10-60 wt.% of Al, at least 25 wt.% of the total content of Co, Mo, Fe and W, and a remainder consisting of Ni and inevitable impurities. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012229459(A) 申请公布日期 2012.11.22
申请号 JP20110096824 申请日期 2011.04.25
申请人 MMC SUPERALLOY CORP 发明人
分类号 C22C19/05;B01D53/46;B01D53/68;B01D53/70;C22C19/03;C22C21/00;C23C10/48 主分类号 C22C19/05
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