SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N
摘要
A method for fabricating a Ill-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar Ill-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III- nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in Ill-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or Ill-nitride device layers can be formed on or above the buffer layers.
申请公布号
WO2012158593(A2)
申请公布日期
2012.11.22
申请号
WO2012US37728
申请日期
2012.05.14
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;HARDY, MATTHEW T.;HSU, PO SHAN;DENBAARS, STEVEN P.;SPECK, JAMES S.;NAKAMURA, SHUJI
发明人
HARDY, MATTHEW T.;HSU, PO SHAN;DENBAARS, STEVEN P.;SPECK, JAMES S.;NAKAMURA, SHUJI