发明名称 |
STRESSED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING |
摘要 |
A semiconductor device and method of manufacturing a semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate and forming a dielectric layer over the substrate. The method further includes forming a first trench within the dielectric layer, wherein the first trench extends through the dielectric layer and epitaxially (epi) growing a first active layer within the first trench and selectively curing with a radiation energy the dielectric layer adjacent to the first active layer. |
申请公布号 |
US2012292639(A1) |
申请公布日期 |
2012.11.22 |
申请号 |
US201113111732 |
申请日期 |
2011.05.19 |
申请人 |
LIAO MIAO-CHENG;HONG MIN HAO;KO HSIANG HSIANG;CHEN KEI-WEI;WANG YING-LANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIAO MIAO-CHENG;HONG MIN HAO;KO HSIANG HSIANG;CHEN KEI-WEI;WANG YING-LANG |
分类号 |
H01L29/06;H01L21/762;H01L29/24 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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