SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING SYSTEM, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing or suppressing increase in threshold voltage and preventing or suppressing decrease in flat band voltage, and a method of manufacturing the same.

SOLUTION: There is provided a semiconductor device comprising: a gate insulating film 30 formed on a semiconductor substrate 10; a TiN film 41 formed on the gate insulating film; a TiAlN film 43 formed on the TiN film 41; and a silicon film 45 formed on the TiAlN film 43.

COPYRIGHT: (C)2013,JPO&INPIT