| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a distributed amplifier that implements high gain, high output, high efficiency, and wideband characteristics preventing a gain drop. <P>SOLUTION: The distributed amplifier includes: a plurality of transistors 1a-1j connected in parallel; a voltage source 2 for supplying an input side bias voltage to the plurality of transistors 1a-1j; and voltage sources 5, 7 for supplying output side bias voltages to the plurality of transistors 1a-1j. As to the output side bias voltages supplied to the plurality of transistors 1a-1j from the power sources 5, 7, the output side bias voltage supplied to the transistor 1a is different from the output side bias voltage supplied to the transistors 1b-1j. <P>COPYRIGHT: (C)2013,JPO&INPIT |
