| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element that allows improvement of the kink characteristics without causing increase in electrical resistance and temperature resistance. <P>SOLUTION: A semiconductor laser element of the present invention comprises: a semiconductor substrate 1; an n-type first cladding layer 2 composed of composition of (Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>)<SB POS="POST">y</SB>In<SB POS="POST">1-y</SB>P; an n-type second cladding layer 3 composed of composition of (Al<SB POS="POST">z</SB>Ga<SB POS="POST">1-z</SB>)<SB POS="POST">y</SB>In<SB POS="POST">1-y</SB>P and in which x is smaller by 0.05 or more than z; a first guide layer 4 composed of composition of (Al<SB POS="POST">u</SB>Ga<SB POS="POST">1-u</SB>)<SB POS="POST">y</SB>In<SB POS="POST">1-y</SB>P and in which u is smaller by 0.5 or more than z; an active layer 5 composed of a group III-V compound semiconductor; a second guide layer 6 composed of composition of (Al<SB POS="POST">u</SB>Ga<SB POS="POST">1-u</SB>)<SB POS="POST">y</SB>In<SB POS="POST">1-y</SB>P; a p-type third cladding layer 7 composed of composition of (Al<SB POS="POST">z</SB>Ga<SB POS="POST">1-z</SB>)<SB POS="POST">y</SB>In<SB POS="POST">1-y</SB>P; a p-type etching stop layer 8 composed of the group III-V compound semiconductor; and a p-type fourth cladding layer 9 composed of composition of (Al<SB POS="POST">z</SB>Ga<SB POS="POST">1-z</SB>)<SB POS="POST">y</SB>In<SB POS="POST">1-y</SB>P and forming a ridge 12. <P>COPYRIGHT: (C)2013,JPO&INPIT |
