发明名称 SALT, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition capable of producing a resist pattern with an excellent focus margin (DOF). <P>SOLUTION: There is provided a salt represented by formula (I), wherein Q<SP POS="POST">1</SP>and Q<SP POS="POST">2</SP>each independently represent a fluorine atom or a 1-6C perfluoroalkyl group; L<SP POS="POST">1</SP>represents *<SP POS="POST">1</SP>-CO-O-, *<SP POS="POST">1</SP>-CO-O-(CH<SB POS="POST">2</SB>)<SB POS="POST">l</SB>-CO-O-, *<SP POS="POST">1</SP>-CH<SB POS="POST">2</SB>-O-CO-, or *<SP POS="POST">1</SP>-CO-O-(CH<SB POS="POST">2</SB>)<SB POS="POST">l</SB>-O-CO- (wherein *<SP POS="POST">1</SP>represents a bonding hand with a carbon atom of -C(Q<SP POS="POST">1</SP>)(Q<SP POS="POST">2</SP>)-, and l represents an integer of 1-6); m represents an integer of 0-2, n represents an integer of 1-12, and o represents 0 or 1; R<SP POS="POST">1</SP>represents a hydrogen atom, a fluorine atom, or a hydroxy group; and Z1<SP POS="POST">+</SP>represents an organic counter ion. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012229199(A) 申请公布日期 2012.11.22
申请号 JP20120054519 申请日期 2012.03.12
申请人 SUMITOMO CHEMICAL CO LTD 发明人 SAKAMOTO HIROSHI;ICHIKAWA KOJI
分类号 C07C309/17;C07C381/12;C08F4/32;C09K3/00;G03F7/004;G03F7/039 主分类号 C07C309/17
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