| 发明名称 |
Method for Producing a Metal Layer on a Substrate and Device |
| 摘要 |
A method produces a metal layer on a semiconductor substrate. A metal layer is produced on the semiconductor substrate by depositing metal particles. The metal particles include cores made of a first metal material and shells surrounding the cores. The shells are made of a second metal material that is resistant to oxidation.
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| 申请公布号 |
US2012292773(A1) |
申请公布日期 |
2012.11.22 |
| 申请号 |
US201113110653 |
申请日期 |
2011.05.18 |
| 申请人 |
HOSSEINI KHALIL;SCHULZE HANS-JOACHIM;INFINEON TECHNOLOGIES AG |
发明人 |
HOSSEINI KHALIL;SCHULZE HANS-JOACHIM |
| 分类号 |
H01L23/52;H01L21/768;H01L21/78;H01L23/532 |
主分类号 |
H01L23/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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