| 摘要 |
<p>The present invention provides a method of forming a double pattern, comprising a step of forming a first resist pattern including (1a) a step of forming a first resist film on a substrate using a first photo-resist composite, (1b) a step of exposing said first resist film, and (1c) a step of developing said exposed first resist film using developing fluid, and a step of forming a second resist pattern including (2a) a step of forming a second resist film in the space of said first resist pattern using a second photo-resist composite, (2b) a step of exposing said second resist film, and (2c) a step of developing said exposed second resist film using a second developing fluid including organic solvent, wherein said first resist pattern is insoluble or hardly-soluble in said second developing fluid.</p> |
