Cu-Co-Si-BASED COPPER ALLOY FOR ELECTRONIC MATERIAL AND METHOD FOR PRODUCING SAME

摘要

A Cu-Co-Si-based alloy that has even mechanical properties and that is provided with favorable mechanical and electrical properties as a copper alloy for an electronic material is provided. The copper alloy for an electronic material contains 0.5-3.0 mass% of Co and 0.1-1.0 mass% of Si, the remainder comprising Cu and unavoidable impurities; the average crystal grain size is 3-15 µm; and the average of the difference between the maximum crystal grain size and the minimum crystal grain size for every 0.05 mm2 of a field of observation is no greater than 5 µm.