NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element operating at high current and with low on-resistance, and a manufacturing method for the same.

SOLUTION: A semiconductor element includes: a nitride semiconductor layer 30 disposed on a substrate 10 and forming a two-dimensional electron gas channel therein; a drain electrode 50 bonded to the nitride semiconductor layer 30 by ohmic junction; a source electrode 60 disposed separated from the drain electrode 50 and bonded to the nitride semiconductor layer 30 by Schottky junction; a dielectric layer 40 formed on the nitride semiconductor layer 30 between the drain electrode 50 and the source electrode 60 and over at least a part of the source electrode 60 and forming a recess between the drain electrode 50 and the source electrode 60; and a gate electrode 70 disposed on the dielectric layer 40 and in the recess separated from the drain electrode 50, and formed over the edge part of the source electrode 60 in the drain direction while a part of which being held between dielectric layers 40.

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