| 摘要 |
<P>PROBLEM TO BE SOLVED: To control the generation of a crack when two or more kinds of platings are selectively deposited by using a same photosensitive material. <P>SOLUTION: The manufacturing apparatus of a semiconductor device includes: a first plating tank in which a surface of a semiconductor wafer 200 in which an insulating film 330 is formed on the surface is performed with a plating process by using a first plating liquid; and a second plating tank in which the surface of the semiconductor wafer 200 is performed with a plating process by using a second plating liquid. A first sealing 320 in which the length of a portion overlapping with the surface of the semiconductor wafer 200 is d<SB POS="POST">1</SB>, and a contact width with the insulating film 330 is w<SB POS="POST">1</SB>is disposed in the first plating tank, and a second sealing 340 in which the length of a portion overlapping with the surface of the semiconductor wafer 200 is d<SB POS="POST">2</SB>, and a contact width with the insulating film 330 is w<SB POS="POST">2</SB>is disposed in the second plating tank, and the relation of d<SB POS="POST">2</SB><d<SB POS="POST">1</SB>-w<SB POS="POST">1</SB>is satisfied between the first sealing 320 and the second sealing 340. <P>COPYRIGHT: (C)2013,JPO&INPIT |
