METHOD FOR MANUFACTURING GALLIUM NITRIDE-BASED FILM CHIP

摘要

A method for manufacturing gallium nitride-based film chip is provided. The method comprises growing a gallium nitride-based semiconductor multilayer structure (110) on a sapphire substrate (100); thinning and polishing the sapphire substrate (100); plating a reflecting compound metal layer (120) on the gallium nitride-based semiconductor multilayer structure (110) by evaporating; coating a first glue (130) on the reflecting compound metal layer (120) and solidifying the first glue (130) with a first temporary substrate (140); peeling the sapphire substrate (100) off by laser; coating a second glue (150) on the peeling surface and solidifying the second glue (150) with a second temporary substrate (160); removing the first temporary substrate (140) and the first glue (130); bonding the reflecting compound metal layer (120)with a permanent substrate (180) by eutectic bonding (170); removing the second temporary substrate (160) and the second glue (150).