| 摘要 |
PURPOSE: A low noise amplifier having a load terminal of a negative resistance structure is provided to offset an effect of parasitic resistance existing within an inductor since the load terminal of the low noise amplifier is formed by combining an inductor with a cross coupled transistor. CONSTITUTION: A common source low noise amplifier comprises an amplification unit(310), a load unit(320), and an output unit(330). The amplification unit has a common source structure. The load unit comprises a third MOS(metal oxide semiconductor transistor) transistor, a fourth MOS, a first on chip inductor, and a second on chip inductor. The output unit is connected to an output terminal of the amplification unit and an input terminal of the load unit. The outputs unit outputs a RF signal amplified by the amplification unit to an outside element. |
