| 摘要 |
Methods of fabricating three-dimensional semiconductor memory devices including forming a plate stack structure with insulating layers and sacrificial layers stacked alternatingly on a substrate, forming first and second trenches separating the plate stack structure into a plurality of mold structures, the first trench being between the second trenches, forming first vertical insulating separators in the first and second trenches, forming semiconductor patterns penetrating the mold structure and being spaced apart from the first and second trenches, removing the first vertical insulating separator from the second trench to expose the sacrificial layers, removing the sacrificial layers exposed by the second trench to form recess regions partially exposing the semiconductor patterns and the first vertical insulating separator, and forming conductive patterns in the recess regions. |
