发明名称 |
MAGNETORESISTANCE SENSOR WITH BUILT-IN SELF-TEST AND DEVICE CONFIGURING ABILITY AND METHOD FOR MANUFACTURING SAME |
摘要 |
A magnetoresistance sensor includes a multifunctional circuit structure having the functionality of built-in self-testing and/or device configuration. The magnetoresistance sensor further includes a substrate having a first dielectric layer formed thereon and a magnetoresistance structure. The multifunctional circuit structure is disposed on the dielectric layer and includes a winding structure for generating a magnetic field for testing and configuring the magnetoresistance sensor. The magnetoresistance structure is disposed on the multifunctional circuit structure, wherein a topmost layer of the magnetoresistance structure includes a magnetoresistance layer, and the magnetoresistance structure generates electrical resistance variance corresponding to the generated magnetic field for testing and configuring the magnetoresistance sensor. A method for manufacturing the magnetoresistance sensor is also provided.
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申请公布号 |
US2012293164(A1) |
申请公布日期 |
2012.11.22 |
申请号 |
US201113188826 |
申请日期 |
2011.07.22 |
申请人 |
LIOU FU-TAI;WONG TA-YUNG;PENG WEI-TUNG;TANG TAI-LANG;VOLTAFIELD TECHNOLOGY CORPORATION |
发明人 |
LIOU FU-TAI;WONG TA-YUNG;PENG WEI-TUNG;TANG TAI-LANG |
分类号 |
G01R33/06;G01R35/00;H05K3/06;H05K3/46 |
主分类号 |
G01R33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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