| 摘要 |
A field-effect transistor includes a semiconductor layer, at least two active regions disposed in the semiconductor layer, a source electrode in contact with one of the two active regions, a drain electrode in contact with the other active region; an insulating layer which is located between the source electrode and the drain electrode and which is disposed on the semiconductor layer, a gate electrode overlying the insulating layer, an adsorption site which is disposed between the gate electrode and the insulating layer and is used to adsorb a molecule, and a driving unit used to drive the gate electrode. |
