| 摘要 |
Provided is a method of producing a semiconductor wafer. The method includes forming an alignment mark on a base wafer, forming, on the base wafer in a region that includes the alignment mark, an inhibition layer for inhibiting crystal growth after forming the alignment mark, forming, in a region of the inhibition layer where no alignment mark is provided, an opening in which the base wafer is exposed, on the basis of information that indicates a location where the opening is to be formed with reference to the position of the alignment mark, and growing a semiconductor crystal inside the opening. |
