| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with suppressed current collapse and high breakdown voltage. <P>SOLUTION: A semiconductor device comprises: a substrate 110; a buffer layer 120 formed on the substrate 110 and composed of a nitride-based compound semiconductor; a channel layer 130 formed on the buffer layer 120 and composed of the nitride-based compound semiconductor; an electron supply layer 132 formed on the channel layer 130 and composed of the nitride-based compound semiconductor; a first electrode 136 formed on the electron supply layer 132; and a second electrode 138 formed on the electron supply layer 132. The potential of the substrate 110 and the potential of the first electrode 136 are the same side with respect to the potential of the second electrode 138. The sum of the thickness of the buffer layer 120 and thickness of the channel layer 130 under the second electrode 138 is larger than the sum of the thickness of the buffer layer 120 and the thickness of the channel layer 130 under the first electrode 136. <P>COPYRIGHT: (C)2013,JPO&INPIT |
