| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a short-circuit in a selection transistor and a peripheral circuit while providing a space between adjacent memory cells and between the memory cell and the selection transistor. <P>SOLUTION: A semiconductor memory device comprises a memory cell string in which a plurality of memory cells having a gate are connected in series to one another. A selection transistor is connected to an end memory cell located at one end of the memory string. A sidewall film coats side surfaces of the gate of the end memory cell and side surfaces of the gate of the selection transistor between the end memory cell and the selection transistor. An air gap exists between the sidewall film of the end memory cell and the sidewall film of the selection transistor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
