| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a heat treatment method for a silicon wafer which can suppress deterioration of surface roughness even when rapid thermal process (RTP) is performed under high temperature at which annihilation force of void defects is high, and can also suppress occurrence of a concave-shaped pit. <P>SOLUTION: The heat treatment for a silicon wafer includes the steps of: rinsing with a hydrogen fluoride-based solution a mirror-polished surface of a silicon wafer configured to form at least a semiconductor device thereon; performing a first rapid temperature rise/drop heat treatment in which the temperature of the rinsed silicon wafer is rapidly raised to and retained in a first temperature range of 900°C or more and 1250°C or less in an ammonia-based gas atmosphere, and is then rapidly dropped; and a second rapid temperature rise/drop heat treatment in which the temperature of the silicon wafer after being subjected to the first rapid temperature rise/drop heat treatment is rapidly raised to and retained in a second temperature range of 1300°C or more and 1400°C or less in an inert gas atmosphere, and is then rapidly dropped. <P>COPYRIGHT: (C)2013,JPO&INPIT |
