发明名称 |
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHODS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE INGOT |
摘要 |
A method of manufacturing a silicon carbide ingot having highly uniform characteristics includes a preparation step of preparing a base substrate made of single crystal silicon carbide and having an off angle of 0.1° or more and 10° or less in an off angle direction which is either a <11-20> direction or a <1-100> direction relative to a (0001) plane, and a film formation step of growing a silicon carbide layer on a surface of the base substrate. In the film formation step, a region having a (0001) facet 5 is formed on a surface of the grown silicon carbide layer at an end portion on an upstream side, the upstream side being a side where an angle of intersection between a <0001> direction axis of the base substrate and the surface of the base substrate in the off angle direction is an acute angle.
|
申请公布号 |
US2012294790(A1) |
申请公布日期 |
2012.11.22 |
申请号 |
US201213472922 |
申请日期 |
2012.05.16 |
申请人 |
SASAKI MAKOTO;NISHIGUCHI TARO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SASAKI MAKOTO;NISHIGUCHI TARO |
分类号 |
C01B31/36;B32B3/02;B32B3/10;B32B9/04;C30B23/02 |
主分类号 |
C01B31/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|