| 摘要 |
<p>A semiconductor device (1) is provided with a buffer layer (21) formed on a substrate (10) (silicon substrate (10a), a channel layer (22) formed on the buffer layer (21), and a barrier layer (23) which is formed on the channel layer (22), and constitutes a heterojunction with the channel layer (22). The buffer layer (21) and the channel layer (22) are formed by a nitride semiconductor. The film thickness of the channel layer (22) is set at 1 µm to 2 µm, and the carbon concentration is set to not more than 5 × 1016 cm-3.</p> |
