| 摘要 |
<P>PROBLEM TO BE SOLVED: To facilitate operation of high-temperature high-impedance sensor assemblies with a desired signal-to-noise ratio (SNR) in severe high-temperature environments. <P>SOLUTION: A sensor assembly 200 includes an outer housing and at least one high-impedance sensing device 204 positioned within the outer housing. The sensor assembly also includes a buffering circuit 250 comprising at least one wide bandgap semiconductor device 256 positioned within the outer housing. The buffering circuit is operatively coupled to the at least one high-impedance sensing device 204. <P>COPYRIGHT: (C)2013,JPO&INPIT |
