发明名称 P-TYPE DIFFUSION LAYER FORMING COMPOSITION, METHOD FOR MANUFACTURING P-TYPE DIFFUSION LAYER, AND METHOD FOR MANUFACTURING SOLAR CELL ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a p-type diffusion layer forming composition capable of forming a p-type diffusion layer without causing an internal stress in a silicon substrate and a warpage of the substrate, in a manufacturing process of a solar cell element using the silicon substrate, a method for manufacturing the p-type diffusion layer, and a method for manufacturing the solar cell element. <P>SOLUTION: The p-type diffusion layer forming composition contains glass powder including an acceptor element, and a dispersant containing a binder having a solubility parameter being equal to or less than 12(MJ/m<SP POS="POST">3</SP>)<SP POS="POST">1/2</SP>. The p-type diffusion layer forming composition is applied to the substrate and is subjected to heat diffusion treatment, whereby a p-type diffusion layer and a solar cell element including the p-type diffusion layer are produced. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012231012(A) 申请公布日期 2012.11.22
申请号 JP20110098365 申请日期 2011.04.26
申请人 HITACHI CHEM CO LTD 发明人 IWAMURO MITSUNORI;YOSHIDA MASATO;NOJIRI TAKESHI;MACHII YOICHI;OKANIWA KAORU;ADACHI SHUICHIRO;KIZAWA KEIKO;SATO TETSUYA
分类号 H01L21/225;H01L31/04 主分类号 H01L21/225
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