| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SOI structure bonded on a support substrate made of oxide glass or oxide glass ceramic. <P>SOLUTION: In a glass-based SOI structure, the oxide glass or oxide glass ceramic is preferably transparent, preferably has a strain point lower than 1,000°C and a specific resistance of 10<SP POS="POST">16</SP>Ω-cm or lower at 250°C, and contains positive ions (for example, alkali ions or alkaline-earth ions) movable in the glass or glass ceramic at a high temperature (for example, 300 to 1,000°C) in response to an electric field. Bonding strength between a semiconductor layer 15 and a support substrate 20 is preferably at least 8 J/m<SP POS="POST">2</SP>. The semiconductor layer 15 can have a mixed region where a semiconductor material reacts with oxygen ions generated from the glass or glass ceramic. The support substrate 20 preferably has a depletion region where a concentration of movable positive ions is reduced. <P>COPYRIGHT: (C)2013,JPO&INPIT |
