SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device which achieve a low-temperature process.

SOLUTION: By simultaneously adding an impurity element and hydrogen which add p-type characteristics to a part of a semiconductor layer with a crystalline configuration, an upper layer part of the part becomes non-crystalline and a crystalline material remains in a lower layer part of the part. By performing a heat treatment, hydrogen in the part is diffused.

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