发明名称 |
RESISTANCE HEATED SAPPHIRE SINGLE CRYSTAL INGOT GROWER, METHOD OF MANUFACTURING RESISTANCE HEATED SAPPHIRE SNGLE CRYSTAL INGOT, SAPPHIRE SNGLE CRYSTAL INGOT, AND SAPPHIRE WAFER |
摘要 |
Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible. |
申请公布号 |
WO2012099343(A3) |
申请公布日期 |
2012.11.22 |
申请号 |
WO2011KR09962 |
申请日期 |
2011.12.21 |
申请人 |
LG SILTRON INC.;SONG, DO-WON;MUN, YOUNG-HEE;LEE, SANG-HOON;JEONG, SEONG-OH;LEE, CHANG-YOUN |
发明人 |
SONG, DO-WON;MUN, YOUNG-HEE;LEE, SANG-HOON;JEONG, SEONG-OH;LEE, CHANG-YOUN |
分类号 |
C30B15/18;C30B29/20;H01L21/02 |
主分类号 |
C30B15/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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