OPTICAL AND THERMAL ENERGY CROSS-LINKABLE INSULATING LAYER MATERIAL FOR ORGANIC THIN FILM TRANSISTOR

摘要

The problem of the present invention is to provide an organic thin film transistor insulating layer material capable of producing an organic thin film transistor having a small absolute value of threshold voltage and small hysteresis. The means for solving the problem is an organic thin film transistor insulating layer material comprising a macromolecular compound (A) containing repeating units having a fluorine atom-containing group, repeating units having a photodimerizable group and repeating units having a first functional group that generates a second functional group which reacts with active hydrogen by the action of electromagnetic waves or heat, and an active hydrogen compound (B).