发明名称 |
THICK FILM PASTE CONTAINING BISMUTH-TELLURIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES |
摘要 |
<p>The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a Pb-free bismuth-tellurium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.</p> |
申请公布号 |
WO2012158905(A1) |
申请公布日期 |
2012.11.22 |
申请号 |
WO2012US38331 |
申请日期 |
2012.05.17 |
申请人 |
E. I. DU PONT DE NEMOURS AND COMPANY;HANG, KENNETH WARREN;WANG, YUELI |
发明人 |
HANG, KENNETH WARREN;WANG, YUELI |
分类号 |
H01B1/22;H01B1/16 |
主分类号 |
H01B1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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