发明名称 DRIVE CIRCUIT FOR VOLTAGE-CONTROL TYPE OF SEMICONDUCTOR SWITCHING DEVICE
摘要 A charging current is supplied to the gate (control terminal) of a driven switching device during an on-state command interval, for raising the gate voltage to an on-state value. Otherwise, discharging of the gate capacitance is enabled, for decreasing the gate voltage to an off-state value. A second switching device is connected between the gate and a circuit point held at the off-state voltage value, and is maintained in an on state while the gate discharging is enabled. At a first time point, the gate voltage rises above a threshold value. At a second time point, a voltage detection circuit detects that that the gate voltage has risen above the threshold value, causing the second switching device to be set in the off state. It is ensured that the delay between the first and second time points is shorter than a minimum duration of an on-state command interval.
申请公布号 US2012293218(A1) 申请公布日期 2012.11.22
申请号 US201213474045 申请日期 2012.05.17
申请人 DEWA TETSUYA;NAKATA SHINICHIRO;SHINDO YUSUKE;DENSO CORPORATION 发明人 DEWA TETSUYA;NAKATA SHINICHIRO;SHINDO YUSUKE
分类号 H03K3/00 主分类号 H03K3/00
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