| 摘要 |
A compound semiconductor according to the present invention can be represented by following chemical formula 1 [Chemical Formula 1] InxMyCo4-m-aAmSb12-n-zXnTez, wherein in the chemical formula 1, M is at least one element selected from a group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, A is at least one element from a group consisting of Fe, Ni, Ru, Rh, Pd, Ir, and Pt, X is at least one element selected from a group consisting of Si, Ga, Ge, and Sn, and wherein 0<x<1, 0<y<1, 0=m=1, 0=n<9, 0<z=2, and 0<a=1. |
