发明名称 Semiconductor Device
摘要 As semiconductor devices including semiconductors, logic circuits are given. Logic circuits include dynamic logic circuits and static logic circuits and are formed using transistors and the like. Dynamic logic circuits can store data for a certain period of time. Thus, leakage current from transistors causes more severe problems in dynamic logic circuits than in static logic circuits. A logic circuit includes a first transistor whose off-state current is small and a second transistor whose gate is electrically connected to the first transistor. Electric charge is supplied to a node of the gate of the second transistor through the first transistor. Electric charge is supplied to the node through a plurality of capacitors. On/off of the second transistor is controlled depending on a state of the electric charge. The first transistor includes an oxide semiconductor in a channel formation region.
申请公布号 US2012293208(A1) 申请公布日期 2012.11.22
申请号 US201213472925 申请日期 2012.05.16
申请人 KATO KIYOSHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KATO KIYOSHI
分类号 H01L25/00;H01L29/94 主分类号 H01L25/00
代理机构 代理人
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