发明名称 LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS
摘要 <p>Deposition of silicon oxide films at low temperature by using wet chemistry techniques. The wet chemistry solution may be a mixture of sodium hypochloride (NaOCl), tetra methyl ammonium hydroxide (TMAH) and hydrated silicate, such as silicic acid. The resulting silicon oxide films provide excellent anti-reflective coatings for solar cells and the like.</p>
申请公布号 WO2012141908(A8) 申请公布日期 2012.11.22
申请号 WO2012US31122 申请日期 2012.03.29
申请人 ASIA UNION ELECTRONIC CHEMICAL CORPORATION;DOVE, CURTIS;SINGH, BALJIT;TESNADO, EDUARD, GIL PARAN;BALOOCH, MEHDI 发明人 DOVE, CURTIS;SINGH, BALJIT;TESNADO, EDUARD, GIL PARAN;BALOOCH, MEHDI
分类号 H01L23/00 主分类号 H01L23/00
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