发明名称 |
METHOD OF IMPLANTING A WORKPIECE TO IMPROVE GROWTH OF A COMPOUND SEMICONDUCTOR |
摘要 |
<p>A workpiece is implanted to improve growth of a compound semiconductor, such as GaN. This workpiece may be implanted such that the workpiece has a dose at a center different from a dose at a periphery. This workpiece also may be implanted one or more times to form a pattern of lines which may be a grid, a series of circles, or other shapes. The distance between certain pairs of Iines may be different across the workpiece.</p> |
申请公布号 |
WO2012158619(A1) |
申请公布日期 |
2012.11.22 |
申请号 |
WO2012US37788 |
申请日期 |
2012.05.14 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;GODET, LUDOVIC;EVANS, MORGAN, D. |
发明人 |
GODET, LUDOVIC;EVANS, MORGAN, D. |
分类号 |
H01L21/02;H01L21/20;H01L21/265 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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