| 摘要 |
<P>PROBLEM TO BE SOLVED: To restrain heating of a substrate by a tray under a high-temperature condition. <P>SOLUTION: In a dry etching method of a substrate using a tray 21, on which a substrate housing hole 21d with an inner periphery including taper surfaces 21e, 21f contactable a lower edge of a substrate 2 is formed, the tray 21 is positioned and lowered to a predetermined position so that a central axis Ac of the substrate housing hole 21d is overlaid on a center C2 of a substrate location surface 13a of an electrostatic chuck 11. Thereby, the substrate 2 is located on the substrate location surface 13a while at least one part of the lower edge is away from the taper surfaces 21e, 21f. The substrate 2 is moved upward to the tray 21 until it is separated from the substrate location surface 13a, and therefore, a portion at the lower edge of the substrate 2 contacting the taper surfaces 21e, 21f is made to follow the taper surfaces. A center C1 of the substrate 2 is positioned on the central axis Ac of the substrate housing hole 21d, and the tray 21 is lowered to a predetermined position, so as to locate the substrate 2 on the substrate location surface 13a while it is away from the tray 21. <P>COPYRIGHT: (C)2013,JPO&INPIT |
