| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high frequency amplifier that implements improved entire radiation performance of the high frequency amplifier owing to a reduced thermal resistance. <P>SOLUTION: A high frequency amplifier 10 includes a plurality of transistor cells 1a-1g, and every two adjacent transistor cells of the plurality of transistor cells 1a-1g arranged on a plane have respective x-axial centers staggered y-axially. <P>COPYRIGHT: (C)2013,JPO&INPIT |
