SEMICONDUTOR LIGHT EMITTING DIODE

摘要

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer (15), a p-side electrode (16), an n-side electrode (17), an inorganic insulating film (14), a p-side interconnection portion (21), an n-side interconnection portion (22), and an organic insulating film (20). The organic insulating film is provided on the inorganic insulating film, at least on a portion between the p-side interconnection portion and the n-side interconnection portion. An end portion (216) of the p-side interconnection portion on the n-side interconnection portion side and an end portion (226) of the n-side interconnection portion on the p-side interconnection portion side override the organic insulating film.