NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element operating in the normally-off mode and in a high-breakdown voltage and high-current state by forming a Schottky electrode in a source region of an FET, including an ohmic pattern electrode therein, and forming a gate electrode in a part of a source electrode region and a part of a nitride semiconductor region, and provide a manufacturing method for the same.

SOLUTION: A semiconductor element includes: a nitride semiconductor layer 30 forming a two-dimensional electron gas (2DEG) channel therein; a drain electrode 50 bonded to the nitride semiconductor layer 30 by ohmic junction; a source electrode 60 separated from the drain electrode 50 and bonded to the nitride semiconductor layer 30 by Schottky junction; a dielectric layer 40 formed on the nitride semiconductor layer 30 between the drain electrode 50 and the source electrode 60 and at least over a part of the source electrode 60; and a gate electrode 70 disposed on the dielectric layer 40 separated away from the drain electrode 50, and formed over the edge part of the source electrode 60 in the drain direction while parts of which holding the dielectric layer 40 therebetween.

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